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(R)
BULK118
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s
s s s s
s
BULK118 IS REVERSE PINS OUT Vs STANDARD SOT-82 PACKAGE AND SAME PINS OUT Vs BULT118 (SOT-32 PACKAGE) STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED SOT-82
APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The devices are designed for use in lighting applications and low cost switch-mode power supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 9 2 4 1 2 45 -65 to 150 150 Unit V V V A A A A W
o o
C C
September 2003
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THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.77 80
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES V EBO Parameter Collector Cut-off Current (V BE = 0) Emitter-Base Voltage Test Conditions V CE = 700 V V CE = 700 V I E = 10 mA I C = 100 mA L = 25 mH T j = 125 o C 9 400 Min. Typ. Max. 100 500 Unit A A V V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
V CE = 400 V I C = 0.5 A IC = 1 A IC = 2 A I C = 0.5 A IC = 1 A IC = 2 A I C = 10 mA I C = 0.5 A IC = 2 A V CC = 125 V I B1 = 0.2 A IC = 1 A V BE = -5 V V clamp = 300 V I B = 0.1 A I B = 0.2 A I B = 0.4 A I B = 0.1 A I B = 0.2 A I B = 0.4 A V CE = 5 V V CE = 5 V V CE = 5 V IC = 1 A I B2 = -0.2 A I B1 = 0.2 A L = 50 mH 10 10 8 0.4 3.2 0.25 0.8 0.16
250 0.5 1 1.5 1.0 1.2 1.3 50
A V V V V V V
V BE(sat)
h FE
tr ts tf ts tf
RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time
0.7 4.5 0.4
s s s s s
Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
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Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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Inductive Load Fall Time Inductive Load Storage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
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Figure 1: Inductive Load Switching Test Circuits.
1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch 2) Non-inductive Resistor
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SOT-82 MECHANICAL DATA
mm MIN. A B b b1 C c1 D e e3 F H H2 2.15 4.15 3.8 2.54 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.100 0.084 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16 MIN. 0.291 0.413 0.028 0.019 0.04 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.444 0.035 0.030 0.106 0.05 0.629
DIM.
C
A
F H
H2
c1 b b1
e e3
D
P032A
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BULK118
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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